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MJE171G

MJE171G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MJE171G
  • Package: TO-225AA, TO-126-3
  • Datasheet: PDF
  • Stock: 974
  • Description: MJE171G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1.7V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
hFE Min 50
Height 11.0998mm
Length 7.7978mm
Width 2.9972mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 1.5W
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJE171
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 12.5W
Power - Max 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
See Relate Datesheet