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MJE18008G

MJE18008G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MJE18008G
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 945
  • Description: MJE18008G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2001
Series SWITCHMODE™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 450V
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Frequency 13MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 13MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 1A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 700mV @ 900mA, 4.5V
Collector Emitter Breakdown Voltage 450V
Transition Frequency 13MHz
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 1kV
Emitter Base Voltage (VEBO) 9V
hFE Min 14
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet