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MJL21196G

MJL21196G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MJL21196G
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 816
  • Description: MJL21196G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1.4V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 26.4mm
Length 20.3mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 260
Current Rating 16A
Frequency 4MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Transistor Application AMPLIFIER
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A 5V
See Relate Datesheet