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MMBFJ113

JFET N-CH 35V 350MW SOT23


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MMBFJ113
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 449
  • Description: JFET N-CH 35V 350MW SOT23 (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 35V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 2mA
Base Part Number MBFJ113
Number of Elements 1
Number of Channels 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 350mW
FET Type N-Channel
Transistor Application SWITCHING
Breakdown Voltage -35V
Drain to Source Voltage (Vdss) 35V
Continuous Drain Current (ID) 2mA
Gate to Source Voltage (Vgs) -35V
FET Technology JUNCTION
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 100Ohm
Feedback Cap-Max (Crss) 5 pF
Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id 500mV @ 1μA
Resistance - RDS(On) 100Ohm
Height 1.2mm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 42 Weeks
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
See Relate Datesheet