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MMBT200

MMBT200 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MMBT200
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 335
  • Description: MMBT200 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 39 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -500mA
Frequency 250MHz
Base Part Number MMBT200
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 5V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -200mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 100
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet