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  • MMBT5551

MMBT5551

MMBT5551 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MMBT5551
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 966
  • Description: MMBT5551 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 31 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Weight 30mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 160V
Max Power Dissipation 350mW
Current Rating 600mA
Frequency 300MHz
Base Part Number MMBT5551
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 350mW
Power - Max 350mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Voltage - Collector Emitter Breakdown (Max) 160V
Current - Collector (Ic) (Max) 600mA
Max Frequency 300MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 160V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Max Junction Temperature (Tj) 150°C
Height 1.2mm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet