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MMBTA06WT1G

MMBTA06WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MMBTA06WT1G
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 309
  • Description: MMBTA06WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBTA06
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
hFE Min 100
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet