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MMBTH10-7

Bipolar Transistors - BJT 25V 300mW


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-MMBTH10-7
  • Package: SOT-23
  • Datasheet: PDF
  • Stock: 854
  • Description: Bipolar Transistors - BJT 25V 300mW (Kg)

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Details

Tags

Parameters
Polarity NPN
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 650MHz
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 650MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
hFE Min 60
Continuous Collector Current 50mA
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.7pF
Height 1mm
Length 3.05mm
Width 1.4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Mount Surface Mount
Package / Case SOT-23
Number of Pins 3
Weight 7.994566mg
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 25V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 50mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
See Relate Datesheet