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MMIX1G320N60B3

Trans IGBT Chip N-CH 600V 400A 21-Pin


  • Manufacturer: IXYS
  • Origchip NO: 401-MMIX1G320N60B3
  • Package: 24-PowerSMD, 21 Leads
  • Datasheet: PDF
  • Stock: 133
  • Description: Trans IGBT Chip N-CH 600V 400A 21-Pin (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mounting Type Surface Mount
Package / Case 24-PowerSMD, 21 Leads
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2011
Series GenX3™
Pbfree Code yes
Part Status Active
Number of Terminations 21
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G21
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Input Type Standard
Power - Max 1000W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 66ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 400A
Power Dissipation-Max (Abs) 1000W
Turn On Time 107 ns
Test Condition 480V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 100A
Turn Off Time-Nom (toff) 595 ns
IGBT Type PT
Gate Charge 585nC
Current - Collector Pulsed (Icm) 1000A
Td (on/off) @ 25°C 44ns/250ns
Switching Energy 2.7mJ (on), 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant
See Relate Datesheet