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MMIX1Y82N120C3H1

DISC IGBT SMPD PKG-STANDARD SMPD


  • Manufacturer: IXYS
  • Origchip NO: 401-MMIX1Y82N120C3H1
  • Package: 24-PowerSMD, 21 Leads
  • Datasheet: -
  • Stock: 913
  • Description: DISC IGBT SMPD PKG-STANDARD SMPD (Kg)

Purchase & Inquiry

Transport

Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mounting Type Surface Mount
Package / Case 24-PowerSMD, 21 Leads
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Part Status Active
Subcategory Insulated Gate BIP Transistors
Input Type Standard
Power - Max 320W
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 78ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 78A
Power Dissipation-Max (Abs) 320W
Test Condition 600V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 82A
IGBT Type PT
Gate Charge 215nC
Current - Collector Pulsed (Icm) 320A
Td (on/off) @ 25°C 29ns/192ns
Switching Energy 4.95mJ (on), 2.78mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
See Relate Datesheet