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MRF6VP11KGSR5

Trans RF MOSFET N-CH 110V 5-Pin NI-1230S T/R


  • Manufacturer: NXP USA Inc.
  • Origchip NO: 568-MRF6VP11KGSR5
  • Package: NI-1230S-4 GW
  • Datasheet: PDF
  • Stock: 756
  • Description: Trans RF MOSFET N-CH 110V 5-Pin NI-1230S T/R (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Factory Lead Time 10 Weeks
Package / Case NI-1230S-4 GW
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 110V
HTS Code 8541.29.00.40
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 130MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF6VP11
Operating Temperature (Max) 150°C
Current - Test 150mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 26dB
Power - Output 1000W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
See Relate Datesheet