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  • MTB50P03HDLT4G

MTB50P03HDLT4G

MOSFET PFET D2PAK 30V 50A 25mOhm


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MTB50P03HDLT4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 111
  • Description: MOSFET PFET D2PAK 30V 50A 25mOhm (Kg)

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Details

Tags

Parameters
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 5V
Rise Time 340ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 218 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage -30V
Height 4.83mm
Length 10.29mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 25MOhm
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -50A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
See Relate Datesheet