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MUBW100-06A8

IGBT MODULE 600V 125A 410W E3


  • Manufacturer: IXYS
  • Origchip NO: 401-MUBW100-06A8
  • Package: E3
  • Datasheet: PDF
  • Stock: 422
  • Description: IGBT MODULE 600V 125A 410W E3 (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 410W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 24
JESD-30 Code R-XUFM-X20
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 410W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 125A
Current - Collector Cutoff (Max) 1.4mA
Collector Emitter Breakdown Voltage 600V
Reverse Voltage 1.6kV
Input Capacitance 4.3nF
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Turn Off Time-Nom (toff) 180 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
RoHS Status ROHS3 Compliant
Factory Lead Time 32 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2007
JESD-609 Code e3
See Relate Datesheet