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MUBW15-12A6

IGBT MODULE 1200V 18A 70W E1


  • Manufacturer: IXYS
  • Origchip NO: 401-MUBW15-12A6
  • Package: E1
  • Datasheet: PDF
  • Stock: 633
  • Description: IGBT MODULE 1200V 18A 70W E1 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 25
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish Matte Tin (Sn)
Additional Feature FAST
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 70W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 25
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 70W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.9V
Max Collector Current 18A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 850nF
Turn On Time 120 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 10A
Turn Off Time-Nom (toff) 770 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 850nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet