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MUBW15-12A6K

Discrete Semiconductor Modules 15 Amps 1200V


  • Manufacturer: IXYS
  • Origchip NO: 401-MUBW15-12A6K
  • Package: E1
  • Datasheet: PDF
  • Stock: 444
  • Description: Discrete Semiconductor Modules 15 Amps 1200V (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Chassis Mount, PCB, Screw
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 25
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 90W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 25
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Output Current 89A
Case Connection ISOLATED
Power - Max 90W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 19A
Current - Collector Cutoff (Max) 600μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Reverse Voltage 1.6kV
Input Capacitance 600pF
Turn On Time 90 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A
Turn Off Time-Nom (toff) 350 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 0.6nF @ 25V
VCEsat-Max 3.4 V
Height 17.1mm
Length 82mm
Width 37.4mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet