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MWI225-17E9

IGBT MODULE 1700V 335A 1400W E+


  • Manufacturer: IXYS
  • Origchip NO: 401-MWI225-17E9
  • Package: E+
  • Datasheet: PDF
  • Stock: 819
  • Description: IGBT MODULE 1700V 335A 1400W E+ (Kg)

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Shipping Cost

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Configuration Three Phase
Case Connection ISOLATED
Power - Max 1400W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.9V
Max Collector Current 335A
Current - Collector Cutoff (Max) 600μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 22nF
Turn On Time 290 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 225A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 22nF @ 25V
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E+
Number of Pins 29
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL REGONIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.4kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 29
JESD-30 Code R-XUFM-X17
Qualification Status Not Qualified
Number of Elements 6
See Relate Datesheet