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MWI25-12A7T

Trans IGBT Module N-CH 1.2KV 50A 24-Pin E2-Pack


  • Manufacturer: IXYS
  • Origchip NO: 401-MWI25-12A7T
  • Package: E2
  • Datasheet: PDF
  • Stock: 982
  • Description: Trans IGBT Module N-CH 1.2KV 50A 24-Pin E2-Pack (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E2
Number of Pins 24
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 13
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 225W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 24
JESD-30 Code R-XUFM-X13
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 225W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 1.65nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 25A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.65nF @ 25V
VCEsat-Max 2.7 V
Height 17mm
Length 107.5mm
Width 45mm
RoHS Status ROHS3 Compliant
See Relate Datesheet