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  • NDB5060L

NDB5060L

NDB5060L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDB5060L
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 245
  • Description: NDB5060L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Terminal Form GULL WING
Current Rating 26A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Voltage 60V
Power Dissipation-Max 68W Tc
Element Configuration Single
Current 26A
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 30V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Rise Time 200ns
Mount Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max) ±16V
Number of Pins 3
Fall Time (Typ) 102 ns
Turn-Off Delay Time 45 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 26A
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Gate to Source Voltage (Vgs) 16V
Pbfree Code yes
Drain-source On Resistance-Max 0.05Ohm
Part Status Active
Drain to Source Breakdown Voltage 60V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Radiation Hardening No
Number of Terminations 2
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
See Relate Datesheet