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  • NDD05N50ZT4G

NDD05N50ZT4G

ON SEMICONDUCTOR NDD05N50ZT4G MOSFET Transistor, N Channel, 4.7 A, 500 V, 1.25 ohm, 10 V, 4.5 V


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDD05N50ZT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 238
  • Description: ON SEMICONDUCTOR NDD05N50ZT4G MOSFET Transistor, N Channel, 4.7 A, 500 V, 1.25 ohm, 10 V, 4.5 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 5 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.5Ohm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.7A Tc
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 4.7A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
DS Breakdown Voltage-Min 500V
Nominal Vgs 4.5 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet