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NDDP010N25AZ-1H

ON SEMICONDUCTOR NDDP010N25AZ-1H MOSFET Transistor, N Channel, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDDP010N25AZ-1H
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 394
  • Description: ON SEMICONDUCTOR NDDP010N25AZ-1H MOSFET Transistor, N Channel, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.42Ohm
Drain to Source Breakdown Voltage 250V
Height 7mm
Length 6.5mm
Width 2.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet