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  • NDF02N60ZH

NDF02N60ZH

NDF02N60ZH datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDF02N60ZH
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 325
  • Description: NDF02N60ZH datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
JEDEC-95 Code TO-220AB
Pin Count 3
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 10A
Number of Elements 1
DS Breakdown Voltage-Min 600V
Power Dissipation-Max 24W Tc
Avalanche Energy Rating (Eas) 120 mJ
Element Configuration Single
Height 16.12mm
Length 10.63mm
Operating Mode ENHANCEMENT MODE
Width 4.9mm
Case Connection ISOLATED
Radiation Hardening No
Turn On Delay Time 9 ns
RoHS Status RoHS Compliant
FET Type N-Channel
Lead Free Lead Free
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 2.4A Tc
Package / Case TO-220-3 Full Pack
Surface Mount NO
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Number of Pins 3
Transistor Element Material SILICON
Rise Time 7ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Drain to Source Voltage (Vdss) 600V
Published 2010
Drive Voltage (Max Rds On,Min Rds On) 10V
JESD-609 Code e3
Pbfree Code yes
Vgs (Max) ±30V
Part Status Obsolete
Fall Time (Typ) 7 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Turn-Off Delay Time 15 ns
ECCN Code EAR99
Continuous Drain Current (ID) 2.4A
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
See Relate Datesheet