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  • NDF08N60ZH

NDF08N60ZH

MOSFET N-CH 600V 8.4A TO-220FP


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDF08N60ZH
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 360
  • Description: MOSFET N-CH 600V 8.4A TO-220FP (Kg)

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Details

Tags

Parameters
RoHS Status RoHS Compliant
Lead Free Lead Free
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 36W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.4A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 8.4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.95Ohm
DS Breakdown Voltage-Min 600V
Height 15.3mm
Length 10.3mm
Width 4.7mm
Radiation Hardening No
See Relate Datesheet