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  • NDS336P

NDS336P

NDS336P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDS336P
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 560
  • Description: NDS336P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 1.2A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Current Rating -1.2A
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Power Dissipation 500mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 29ns
See Relate Datesheet