All Products

NE3509M04-A

RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET


  • Manufacturer: CEL
  • Origchip NO: 130-NE3509M04-A
  • Package: SOT-343F
  • Datasheet: PDF
  • Stock: 143
  • Description: RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mount Surface Mount
Package / Case SOT-343F
Number of Pins 4
Supplier Device Package M04
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated 4V
Current Rating (Amps) 60mA
Frequency 2GHz
Base Part Number NE3509
Power Dissipation 125mW
Current - Test 10mA
Transistor Type HFET
Continuous Drain Current (ID) 60mA
Gate to Source Voltage (Vgs) 3V
Gain 17.5dB
Drain to Source Breakdown Voltage 2V
Power - Output 11dBm
Noise Figure 0.4dB
Voltage - Test 2V
Min Breakdown Voltage 4V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet