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NE3512S02-T1D-A

NE3512S02-T1D-A datasheet pdf and Transistors - FETs, MOSFETs - RF product details from RENESAS ELECTRONICS CORP stock available at Feilidi


  • Manufacturer: RENESAS ELECTRONICS CORP
  • Origchip NO: 668-NE3512S02-T1D-A
  • Package: -
  • Datasheet: -
  • Stock: 842
  • Description: NE3512S02-T1D-A datasheet pdf and Transistors - FETs, MOSFETs - RF product details from RENESAS ELECTRONICS CORP stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time [object Object]
Surface Mount YES
Number of Terminals 4
Transistor Element Material SILICON
JESD-609 Code e6
Pbfree Code yes
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Additional Feature LOW NOISE
Subcategory Other Transistors
Terminal Position QUAD
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PQMW-F4
Qualification Status Not Qualified
Operating Temperature (Max) 125°C
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 0.015A
DS Breakdown Voltage-Min 3V
FET Technology HETERO-JUNCTION
Power Dissipation-Max (Abs) 0.165W
Highest Frequency Band KU B
Power Gain-Min (Gp) 12.5dB
RoHS Status RoHS Compliant
See Relate Datesheet