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NE5511279A-T1-A

RF MOSFET Transistors UHF Band RF Power


  • Manufacturer: CEL
  • Origchip NO: 130-NE5511279A-T1-A
  • Package: 4-SMD, Flat Leads
  • Datasheet: -
  • Stock: 314
  • Description: RF MOSFET Transistors UHF Band RF Power (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4
Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Voltage - Rated DC 7.5V
Max Power Dissipation 20W
Terminal Position QUAD
Current Rating 79A
Frequency 900MHz
Base Part Number NE55112
Pin Count 4
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Case Connection SOURCE
Current - Test 400mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 7.5V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 6V
Gain 15dB
Max Output Power 10W
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 20V
Power - Output 40dBm
FET Technology METAL-OXIDE SEMICONDUCTOR
Min Breakdown Voltage 20V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet