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RF/IF & RFID
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NE5511279A-T1-A
Purchase
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For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Number of Pins | 4 |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 7.5V |
| Max Power Dissipation | 20W |
| Terminal Position | QUAD |
| Current Rating | 79A |
| Frequency | 900MHz |
| Base Part Number | NE55112 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 20W |
| Case Connection | SOURCE |
| Current - Test | 400mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 7.5V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 6V |
| Gain | 15dB |
| Max Output Power | 10W |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Power - Output | 40dBm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Min Breakdown Voltage | 20V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet