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NESG3031M14-T3-A

NESG3031M14-T3-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from RENESAS ELECTRONICS CORP stock available at Feilidi


  • Manufacturer: RENESAS ELECTRONICS CORP
  • Origchip NO: 668-NESG3031M14-T3-A
  • Package: -
  • Datasheet: -
  • Stock: 772
  • Description: NESG3031M14-T3-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from RENESAS ELECTRONICS CORP stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time [object Object]
Surface Mount YES
Number of Terminals 4
Transistor Element Material SILICON GERMANIUM
JESD-609 Code e6
Pbfree Code yes
ECCN Code EAR99
Terminal Finish TIN BISMUTH
Additional Feature LOW NOISE
HTS Code 8541.21.00.95
Subcategory BIP RF Small Signal
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PDSO-F4
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.15W
Collector Current-Max (IC) 0.035A
DC Current Gain-Min (hFE) 220
Collector-Emitter Voltage-Max 4.3V
Highest Frequency Band C B
Collector-Base Capacitance-Max 0.25pF
RoHS Status RoHS Compliant
See Relate Datesheet