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NGTB20N135IHRWG

NGTB20N135IHRWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NGTB20N135IHRWG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 135
  • Description: NGTB20N135IHRWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Emitter Voltage (VCEO) 1.35kV
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1.35kV
Voltage - Collector Emitter Breakdown (Max) 1350V
Collector Emitter Saturation Voltage 2.2V
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 20A
IGBT Type Trench Field Stop
Gate Charge 234nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/245ns
Switching Energy 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 394W
Pin Count 3
Element Configuration Single
Power Dissipation 394W
Input Type Standard
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
See Relate Datesheet