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NGTB30N60L2WG

NGTB30N60L2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NGTB30N60L2WG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 914
  • Description: NGTB30N60L2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 225W
Reach Compliance Code not_compliant
Element Configuration Single
Input Type Standard
Power - Max 225W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 100A
Reverse Recovery Time 70 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 300V, 30A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 30A
Gate Charge 166nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 100ns/390ns
Switching Energy 310μJ (on), 1.14mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet