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NGTB40N120FL2WG

IGBT Transistors 1200V/40A FAST IGBT FSII


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NGTB40N120FL2WG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 467
  • Description: IGBT Transistors 1200V/40A FAST IGBT FSII (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 535W
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 535W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Reverse Recovery Time 240 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 313nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 116ns/286ns
Switching Energy 3.4mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet