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NGTB40N65FL2WG

ON SEMICONDUCTOR NGTB40N65FL2WGIGBT Single Transistor, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 Pins


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NGTB40N65FL2WG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 326
  • Description: ON SEMICONDUCTOR NGTB40N65FL2WGIGBT Single Transistor, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 Pins (Kg)

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Details

Tags

Parameters
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.1V
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 170nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 84ns/177ns
Switching Energy 970μJ (on), 440μJ (off)
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 21 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 366W
Element Configuration Single
Input Type Standard
Power - Max 366W
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 72 ns
See Relate Datesheet