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NGTG15N60S1EG

NGTG15N60S1EG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NGTG15N60S1EG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 660
  • Description: NGTG15N60S1EG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 117W
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 65 ns
Power - Max 117W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 170 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 30A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Turn On Time 93 ns
Test Condition 400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 15A
Turn Off Time-Nom (toff) 440 ns
IGBT Type NPT
Gate Charge 88nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 65ns/170ns
Switching Energy 550μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet