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  • NIF9N05CLT1G

NIF9N05CLT1G

NIF9N05CLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NIF9N05CLT1G
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 122
  • Description: NIF9N05CLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Pbfree Code yes
Power Dissipation 1.69W
Case Connection DRAIN
Part Status Obsolete
Clamping Voltage 52V
Moisture Sensitivity Level (MSL) 3 (168 Hours)
FET Type N-Channel
Number of Terminations 4
Transistor Application SWITCHING
Termination SMD/SMT
Rds On (Max) @ Id, Vgs 125m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
ECCN Code EAR99
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 35V
Resistance 107MOhm
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Terminal Finish Tin (Sn)
Rise Time 290ns
Additional Feature LOGIC LEVEL COMPATIBLE
Drain to Source Voltage (Vdss) 59V
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Subcategory FET General Purpose Power
Vgs (Max) ±15V
Voltage - Rated DC 52V
Fall Time (Typ) 290 ns
Turn-Off Delay Time 1.54 μs
Continuous Drain Current (ID) 2.6A
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Threshold Voltage 1.75V
Gate to Source Voltage (Vgs) 15V
Terminal Form GULL WING
Drain to Source Breakdown Voltage 52V
Dual Supply Voltage 52V
Peak Reflow Temperature (Cel) 260
Nominal Vgs 1.75 V
Radiation Hardening No
Lifecycle Status CONSULT SALES OFFICE (Last Updated: 4 days ago)
Current Rating 2.6A
Mount Surface Mount
REACH SVHC No SVHC
Time@Peak Reflow Temperature-Max (s) 40
Mounting Type Surface Mount
Pin Count 4
RoHS Status RoHS Compliant
Package / Case TO-261-4, TO-261AA
Lead Free Lead Free
Number of Elements 1
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Published 2006
Power Dissipation-Max 1.69W Ta
JESD-609 Code e3
See Relate Datesheet