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NJL3281DG

NJL3281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NJL3281DG
  • Package: TO-264-5
  • Datasheet: PDF
  • Stock: 495
  • Description: NJL3281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-264-5
Surface Mount NO
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 260V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 30MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 260V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 5A 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 10A
Collector Emitter Breakdown Voltage 260V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 3V
Max Breakdown Voltage 260V
Collector Base Voltage (VCBO) 260V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 25.98mm
Length 19.89mm
Width 4.89mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet