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NSBC143TDXV6T1G

Dual NPN Bipolar Digital Transistor (BRT)


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NSBC143TDXV6T1G
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 303
  • Description: Dual NPN Bipolar Digital Transistor (BRT) (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NSBC1*
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 357mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 160
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet