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NSS12501UW3T2G

NSS12501UW3T2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NSS12501UW3T2G
  • Package: 3-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 970
  • Description: NSS12501UW3T2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 3-WDFN Exposed Pad
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Position DUAL
Frequency 150MHz
Base Part Number NSS12501
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Case Connection COLLECTOR
Power - Max 875mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 120mV @ 400mA, 4A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 120mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Turn Off Time-Max (toff) 420ns
Height 750μm
Length 2mm
Width 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet