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NSS20201LT1G

NSS20201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NSS20201LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 367
  • Description: NSS20201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 540mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSS20201
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 540mW
Power - Max 460mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 100mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 4mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet