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NSS30070MR6T1G

NSS30070MR6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NSS30070MR6T1G
  • Package: SC-74, SOT-457
  • Datasheet: PDF
  • Stock: 110
  • Description: NSS30070MR6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 150
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 342mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -700mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSS30070
Pin Count 6
Number of Elements 1
Element Configuration Single
Power - Max 342mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 70mA, 700mA
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 400mV
See Relate Datesheet