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NSS40300DDR2G

Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NSS40300DDR2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 329
  • Description: Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP (Kg)

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Details

Tags

Parameters
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 783mW
Terminal Form GULL WING
Pin Count 8
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power - Max 653mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 170mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 170mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 3A
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 135mV
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -7V
hFE Min 250
Turn Off Time-Max (toff) 530ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet