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NSVBCP56-10T3G

NSVBCP56-10T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NSVBCP56-10T3G
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 643
  • Description: NSVBCP56-10T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.5W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 130MHz
Frequency - Transition 130MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet