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NTA4153NT1

MOSFET N-CH 20V 915MA SOT-416


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTA4153NT1
  • Package: SC-75, SOT-416
  • Datasheet: PDF
  • Stock: 964
  • Description: MOSFET N-CH 20V 915MA SOT-416 (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 915mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 16V
Current - Continuous Drain (Id) @ 25°C 915mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.82nC @ 4.5V
Rise Time 4.4ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 915mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.915A
Drain to Source Breakdown Voltage 20V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet