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  • NTB6413ANG

NTB6413ANG

MOSFET N-CH 100V 42A D2PAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTB6413ANG
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 976
  • Description: MOSFET N-CH 100V 42A D2PAK (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 84ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 71 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 200 mJ
Nominal Vgs 4 V
Height 4.83mm
Length 10.29mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 28MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 136W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 42A, 10V
See Relate Datesheet