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NTBV5605T4G

MOSFET P-CH 60V 18.5A D2PAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTBV5605T4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 767
  • Description: MOSFET P-CH 60V 18.5A D2PAK (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18.5A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time 122ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 18.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.14Ohm
Pulsed Drain Current-Max (IDM) 55A
DS Breakdown Voltage-Min 60V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet