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  • NTD110N02RT4G

NTD110N02RT4G

NTD110N02RT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD110N02RT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 822
  • Description: NTD110N02RT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 4.1MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 110A
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.5W Ta 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.88W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 20V
Current - Continuous Drain (Id) @ 25°C 12.5A Ta 110A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Rise Time 39ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 32A
Drain to Source Breakdown Voltage 24V
Nominal Vgs 1.5 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet