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  • NTD23N03RT4G

NTD23N03RT4G

MOSFET N-CH 25V 3.8A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD23N03RT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 703
  • Description: MOSFET N-CH 25V 3.8A DPAK (Kg)

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Details

Tags

Parameters
Pin Count 4
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
JESD-30 Code R-PSSO-G2
Mount Surface Mount
Number of Elements 1
Mounting Type Surface Mount
Power Dissipation-Max 1.14W Ta 22.3W Tc
Element Configuration Single
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Mode ENHANCEMENT MODE
Number of Pins 4
Power Dissipation 22.3W
Transistor Element Material SILICON
Case Connection DRAIN
Operating Temperature -55°C~150°C TJ
Turn On Delay Time 2 ns
FET Type N-Channel
Packaging Tape & Reel (TR)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 6A, 10V
Published 2009
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V
JESD-609 Code e3
Current - Continuous Drain (Id) @ 25°C 3.8A Ta 17.1A Tc
Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V
Rise Time 14.9ns
Pbfree Code yes
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Part Status Obsolete
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 9.9 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Number of Terminations 2
Drain Current-Max (Abs) (ID) 3.8A
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 25V
Terminal Finish Tin (Sn)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 23A
See Relate Datesheet