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NTD25P03LT4

MOSFET P-CH 30V 25A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD25P03LT4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 269
  • Description: MOSFET P-CH 30V 25A DPAK (Kg)

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Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn80Pb20)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.95
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -25A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 75W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 37ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±15V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.08Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 200 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet