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NTD3055-094-1G

Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Rail


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD3055-094-1G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 454
  • Description: Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Rail (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 94MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 12A
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 1.5W Ta 48W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 7.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 94m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 32.3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23.9 ns
Turn-Off Delay Time 25.2 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 2.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet