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NTD3055L170-1G

MOSFET N-CH 60V 9A IPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD3055L170-1G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 932
  • Description: MOSFET N-CH 60V 9A IPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 9A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.5W Ta 28.5W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 28.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 4.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time 69ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.17Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 27A
Avalanche Energy Rating (Eas) 30 mJ
Nominal Vgs 1.7 V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet