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NTD4804N-35G

MOSFET N-CH 30V 14.5A IPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4804N-35G
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 511
  • Description: MOSFET N-CH 30V 14.5A IPAK (Kg)

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Details

Tags

Parameters
Power Dissipation-Max 1.43W Ta 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 12V
Current - Continuous Drain (Id) @ 25°C 14.5A Ta 124A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 117A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 450 mJ
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
See Relate Datesheet