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  • NTD4813NHT4G

NTD4813NHT4G

NTD4813NHT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4813NHT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 835
  • Description: NTD4813NHT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 2 hours ago)
JESD-30 Code R-PSSO-G2
Contact Plating Tin
Number of Elements 1
Mounting Type Surface Mount
Power Dissipation-Max 1.27W Ta 35.3W Tc
Element Configuration Single
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Mode ENHANCEMENT MODE
Surface Mount YES
Power Dissipation 1.94W
Number of Pins 4
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 30A, 10V
Transistor Element Material SILICON
Vgs(th) (Max) @ Id 2.5V @ 250μA
Operating Temperature -55°C~175°C TJ
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 40A Tc
Packaging Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 16.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 16.1 ns
Turn-Off Delay Time 17.2 ns
Published 2008
Continuous Drain Current (ID) 9A
JESD-609 Code e3
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0259Ohm
Drain to Source Breakdown Voltage 30V
Pbfree Code yes
Pulsed Drain Current-Max (IDM) 90A
Part Status Active
Radiation Hardening No
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Lead Free
Number of Terminations 2
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Factory Lead Time 2 Weeks
Pin Count 4
See Relate Datesheet